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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
D882
FEATURES
1.BASE
TRANSISTOR NPN(c) TO 251
Power dissipation PCM : 1.25W Tamb=25ae(c) Collector current ICM: 3A Collector-base voltage V(BR)CBO : 40V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE (sat) VBE (sat) fT
2.COLLECTOR 3.EMITTER
1
2
3
unless
Test
otherwise
specified(c)
TYP MAX UNIT V V V 1 10 1 A A A
conditions
MIN 40 30 6
Ic= 100|I AIE=0 Ic= 10 mAIB=0 IE= 100|I AIC=0 VCB= 40 VIE=0 VCE= 30 VIB=0 VEB= 6 VIC=0 VCE= 2 V, IC= 1A VCE= 2 V, IC= 100m A IC= 2A, IB= 0.2 A IC= 2A, IB= 0.2 A VCE= 5V, Ic=0.1A f =10MHz
60 32
400
0.5 1.5 50
V V MHz
CLASSIFICATION OF h FE(1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400
TO-251 PACKAGE OUTLINE DIMENSIONS
D D1 C1
A
B
b1 b L e e1
E
A1
C
Symbol A A1 B b b1 c c1 D D1 E e e1 L
Dimensions In Millimeters Min 2.200 1.020 1.350 0.500 0.700 0.430 0.430 6.350 5.200 5.400 2.300TYP 4.500 7.500 4.700 7.900 Max 2.400 1.270 1.650 0.700 0.900 0.580 0.580 6.650 5.400 5.700 Min
Dimensions In Inches Max 0.094 0.050 0.065 0.028 0.035 0.023 0.023 0.262 0.213 0.224 0.091TYP 0.177 0.295 0.185 0.311 0.087 0.040 0.053 0.020 0.028 0.017 0.017 0.250 0.205 0.213

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